Z Bougrioua: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures

Z. Bougrioua, I. Moerman, L. Nistor, B. Van Daele, E. Monroy, T. Palacios, F. Calle, M. Leroux

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 396 KB

english, 2003

2

Structural and photoluminescence studies of highly crystalline un-annealed ZnO nanorods arrays synthesized by hydrothermal technique

Gokarna, Anisha, Kim, Je-Hyung, Leroy, Floriane, Patriarche, Gilles, Roussel, Pascal, Bougrioua, Zahia, Rodriguez, Christophe, Dogheche, Elhadj, Cho, Yong-Hoon

Journal:

Journal of Luminescence

Year:

2013

Language:

english

File:

PDF, 3.65 MB

english, 2013

3

Thermoelectric properties of nanostructured porous-polysilicon thin films

Ziouche, Katir, Bel-Hadj, Ibrahim, Bougrioua, Zahia

Journal:

Year:

2021

File:

PDF, 5.61 MB

2021

4

Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates

Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 178 KB

english, 2005

5

Quasi-monolithic heat flux microsensor based on porous silicon boxes

Katir Ziouche, Pascale Godts, Zahia Bougrioua, Charles Sion, Tuami Lasri, Didier Leclercq

Journal:

Sensors and Actuators A: Physical

Year:

2010

Language:

english

File:

PDF, 947 KB

english, 2010

6

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Y. Guhel, B. Boudart, N. Vellas, C. Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, M. Germain

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 548 KB

english, 2005

7

Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt, H. Haas

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

8

Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

D. Mistele, T. Rotter, A. Horn, O. Katz, Z. Bougrioua, J. Aderhold, J. Graul, G. Bahir, J. Salzman

Journal:

Journal of Electronic Materials

Year:

2003

Language:

english

File:

PDF, 272 KB

english, 2003

9

Comparative studies of Pt and Ir schottky contacts on undoped Al0.36Ga0.64N

Y. Guhel, B. Boudart, E. Delos, M. Germain, Z. Bougrioua

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 159 KB

english, 2006

10

Unpackaged infrared thermoelectric microsensor realised on suspended membrane by silicon technology

Charles Sion, Pascale Godts, Katir Ziouche, Zahia Bougrioua, Tuami Lasri, Didier Leclercq

Journal:

Sensors and Actuators A: Physical

Year:

2012

Language:

english

File:

PDF, 1.28 MB

english, 2012

11

Evidence of an impurity band at an n-GaN/sapphire interface

Mavroidis, C., Harris, J.J., Jackman, R.B., Bougrioua, Z., Moerman, I.

Journal:

Diamond and Related Materials

Year:

2003

Language:

english

File:

PDF, 189 KB

english, 2003

12

Simultaneous Fabrication of Superhydrophobic and Superhydrophilic Polyimide Surfaces with Low Hysteresis

Scheen, Gilles, Ziouche, Katir, Bougrioua, Zahia, Godts, Pascale, Leclercq, Didier, Lasri, Tuami

Journal:

Year:

2011

Language:

english

File:

PDF, 3.48 MB

english, 2011

13

Importance of Ion Transport in Industrial LCD Applications

Vleeschouwer, Herbert De, Bougrioua, Fatiha, Pauwels, Herman

Journal:

Molecular Crystals and Liquid Crystals Science and Technology Section A Molecular Crystals and Liquid Crystals

Year:

2001

Language:

english

File:

PDF, 455 KB

english, 2001

14

Dispersive Ion Generation in Nematic Liquid Crystal Displays

De Vleeschouwer, Herbert, Verschueren, Alwin, Bougrioua, Fatiha, Neyts, Kristiaan, Stojmenovik, Goran, Vermael, Stefaan, Pauwels, Herman

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 150 KB

english, 2002

15

Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures

Lorenzini, P., Bougrioua, Z., Tiberj, A., Tauk, R., Azize, M., Sakowicz, M., Karpierz, K., Knap, W.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 276 KB

english, 2005

16

Silicon-Based Monolithic Planar Micro Thermoelectric Generator Using Bonding Technology

Ziouche, Katir, Yuan, Zheng, Lejeune, Pascale, Lasri, Tuami, Leclercq, Didier, Bougrioua, Zahia

Journal:

Journal of Microelectromechanical Systems

Year:

2017

Language:

english

File:

PDF, 971 KB

english, 2017

17

Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE

Z. Bougrioua, J.-L. Farvacque, I. Moerman, P. Demeester, J.J. Harris, K. Lee, G. van Tendeloo, O. Lebedev, E.J. Thrush

Journal:

physica status solidi (b)

Year:

1999

Language:

english

File:

PDF, 221 KB

english, 1999

18

Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J. J. Harris, K. J. Lee, I. Harrison, L. B. Flannery, D. Korakakis, T. S. Cheng, C. T. Foxon, Z. Bougrioua, I. Moerman, W. Van der Stricht, E. J. Thrush, B. Hamilton, K. Ferhah

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 142 KB

english, 1999

19

Simultaneous Impurity-Band and Interface Conduction in Depth-Profiled n-GaN Epilayers

C. Mavroidis, J.J. Harris, K. Lee, I. Harrison, B.J. Ansell, Z. Bougrioua, I. Moerman

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 130 KB

english, 2001

20

2DEG Mobility in AlGaN–GaN Structures Grown by LP-MOVPE

Z. Bougrioua, J.-L. Farvacque, I. Moerman, F. Carosella

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 86 KB

english, 2001

21

Relation between Microstructure and 2DEG Properties of AlGaN/GaN Structures

B. Van Daele, G. Van Tendeloo, M. Germain, M. Leys, Z. Bougrioua, I. Moerman

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 106 KB

english, 2002

22

Heterostructure Field Effect Transistor Types with Novel Gate Dielectrics

D. Mistele, T. Rotter, Z. Bougrioua, K.S. Röver, F. Fedler, H. Klausing, J. Stemmer, O. K Semchinova, J. Aderhold, J. Graul

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

23

Effect of Dielectric Layers on the Performance of AlGaN-Based UV Schottky Photodiodes

E. Monroy, F. Calle, J.L. Pau, E. Muñoz, M. Verdú, F.J. Sánchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, E. San Andrés

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 87 KB

english, 2001

24

Reliability of Schottky Contacts on AlGaN

E. Monroy, F. Calle, T. Palacios, J. Sánchez-Osorio, M. Verdú, F.J. Sánchez, M.T. Montojo, F. Omnès, Z. Bougrioua, I. Moerman, P. Ruterana

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 93 KB

english, 2001

25

Influence of Process Technology on DC-Performance of GaN-Based HFETs

D. Mistele, T. Rotter, Z. Bougrioua, M. Marso, H. Roll, H. Klausing, F. Fedler, O. Semchinova, I. Moerman, J. Graul

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 324 KB

english, 2002

26

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J. C. Pesant, Z. Bougrioua, M. Germain, J. C. De Jaeger, C. Gaquiere

Journal:

Microwave and Optical Technology Letters

Year:

2005

Language:

english

File:

PDF, 226 KB

english, 2005

27

Mixtures of d- and l-carvone: I. Differential scanning calorimetry and solid-liquid phase diagram

H.E. Gallis, F. Bougrioua, H.A.J. Oonk, P.J. van Ekeren, J.C. van Miltenburg

Journal:

Thermochimica Acta

Year:

1996

Language:

english

File:

PDF, 450 KB

english, 1996

28

Metal contacts to n-GaN

L. Dobos, B. Pécz, L. Tóth, Zs.J. Horváth, Z.E. Horváth, A. Tóth, E. Horváth, B. Beaumont, Z. Bougrioua

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 1.03 MB

english, 2006

29

Electrical behaviour of lateral Al/n-GaN/Al structures

Zs. J. Horváth, L. Dobos, B. Beaumont, Z. Bougrioua, B. Pécz

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 649 KB

english, 2010

30

Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

M. Katsikini, F. Pinakidou, J. Arvanitidis, E.C. Paloura, S. Ves, Ph. Komninou, Z. Bougrioua, E. Iliopoulos, T.D. Moustakas

Journal:

Materials Science and Engineering: B

Year:

2011

Language:

english

File:

PDF, 421 KB

english, 2011

31

Dislocations and quantum transport: a possible hint for one-dimensional conductivity along dislocation lines; a fundamental mechanism for the EBIC contrast formation

Z. Bougrioua, D. Ferré, J.L. Farvacque

Journal:

Materials Science and Engineering: B

Year:

1994

Language:

english

File:

PDF, 438 KB

english, 1994

32

Efficiency optimization of p-type doping in GaN:Mg layers grown by molecular-beam epitaxy

F.B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, K.H. Ploog

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 241 KB

english, 2004

33

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laügt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 440 KB

english, 2005

34

Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates

M. Azize, Z. Bougrioua, P. Gibart

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 569 KB

english, 2007

35

Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques

Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jaras˘iūnas

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 243 KB

english, 2007

36

Growth of freestanding GaN using pillar-epitaxial lateral overgrowth from GaN nanocolumns

Z. Bougrioua, P. Gibart, E. Calleja, U. Jahn, A. Trampert, J. Ristic, M. Utrera, G. Nataf

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 781 KB

english, 2007

37

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, S. Chenot, O. Tottereau, J. Massies, P. Gibart

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 394 KB

english, 2008

38

Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani

Journal:

Journal of Crystal Growth

Year:

2008

Language:

english

File:

PDF, 251 KB

english, 2008

39

Anisotropic propagation of surface acoustic waves on nitride layers

J. Pedrós, F. Calle, J. Grajal, R.J. Jiménez Riobóo, C. Prieto, J.L. Pau, J. Pereiro, M. Hermann, M. Eickhoff, Z. Bougrioua

Journal:

Superlattices and Microstructures

Year:

2004

Language:

english

File:

PDF, 1.87 MB

english, 2004

40

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

I. Halidou, Z. Benzarti, Z. Bougrioua, T. Boufaden, B. El Jani

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 748 KB

english, 2006

41

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pécz, L. Tóth, Zs.J. Horváth, Z.E. Horváth, B. Beaumont, Z. Bougrioua

Journal:

Year:

2008

Language:

english

File:

PDF, 389 KB

english, 2008

42

Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pécz, L. Tóth, Zs.J. Horváth, Z.E. Horváth, E. Horváth, A. Tóth, B. Beaumont, Z. Bougrioua

Journal:

Year:

2009

Language:

english

File:

PDF, 282 KB

english, 2009

43

Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry

A Stafford, S.J.C Irvine, Z Bougrioua, K Jacobs, I Moerman, E.J Thrush, L Considine

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 160 KB

english, 2000

44

Chemical mapping of InGaN MQWs

Nikhil Sharma, David Tricker, Paul Thomas, Zahia Bougrioua, Koen Jacobs, Jan Cheyns, Ingrid Moerman, Ted Thrush, Laurence Considine, Adam Boyd, Colin Humphreys

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 241 KB

english, 2001

45

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 192 KB

english, 2001

46

Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE

J.-L Farvacque, Z Bougrioua, I Moerman, G Van Tendeloo, O Lebedev

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 305 KB

english, 1999

47

Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

M. Azize, M. Leroux, M. Laugt, P. Gibart, Z. Bougrioua

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 192 KB

english, 2006

48

Magnetotransport characterization of AlGaN/GaN interfaces

R. Tauk, A. Tiberj, P. Lorenzini, Z. Bougrioua, M. Azize, M. Sakowicz, K. Karpierz, W. Knap

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 236 KB

english, 2007

49

Reduction of stacking faults in (110) and (112) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 517 KB

english, 2007

50

Mosaicity and stress effects on luminescence properties of GaN

A. Toure, A. Bchetnia, T. A. Lafford, Z. Benzarti, I. Halidou, Z. Bougrioua, B. El Jani

Journal:

physica status solidi (a)

Year:

2008

Language:

english

File:

PDF, 397 KB

english, 2008

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски